Gallium nitride (GaN)-based light-emitting diodes (LEDs) have transformed the lighting industry by replacing conventional lighting technologies with superior energy efficiency, longer operating life and greater environmental sustainability.
In recent years, considerable attention has been paid to the trend toward miniaturization of LEDs, driven by display devices, augmented reality, virtual reality, and other emerging technologies. Due to the lack of cost-effective native substrates, the presence of high threading dislocation density in heteroepitaxial films grown on sapphire substrate is a major limiting factor for device performance.
In addition, Fresnel reflections at the interface between epitaxy and substrate caused by abrupt changes in the refractive indices of the material reduce the light energy utilization.
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