Scientists outline new processes for leveraging hafnia’s ferroelectric features with the aim of enhancing high-performance computing.
Scientists and engineers have been pushing for the past decade to leverage an elusive ferroelectric material called hafnium oxide, or hafnia, to usher in the next generation of computing memory. A team of researchers including the University of Rochester’s Sobhit Singh published a Proceedings of the National Academy of Sciences study outlining progress toward making bulk ferroelectric and antiferroelectric hafnia available for use in a variety of applications.
In a specific crystal phase, hafnia exhibits ferroelectric properties—that is, electric polarization that can be changed in one direction or another by applying an external electric field. This feature can be harnessed in data storage technology. When used in computing, ferroelectric memory has the benefit of non-volatility, meaning it retains its values even when powered off, one of several advantages over most types of memory used today.
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